Temperature dependence of the reflectivity in absorbing Bragg reflectors.

نویسندگان

  • J L Shen
  • C Chang
  • W Chou
  • M Wu
  • Y Chen
چکیده

The reflectivity of absorbing Bragg reflectors consisting of a GaAs/AlAs Bragg mirror and a InGaAs/InGaAsP multiple-quantum-well cavity layer was studied as a function of temperature. An absorption dip in the stop band due to the optical confinement of the Fabry-Perot resonance was observed in the reflectivity spectra. The absorption intensity of the dip increased with temperature and was explained by the resonant coincidence of the Fabry-Perot cavity mode and the quantum-well absorption. The temperature-dependent reflectivity spectra were successfully reproduced using the transfer matrix method and the linear dependence of the refractive index on temperature.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

APPLIED PHYSICS REVIEWS—FOCUSED REVIEW High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications

AlGaInP lattice matched to GaAs is suited for light-emitting diodes ~LEDs! operating in the red, orange, yellow, and yellow–green wavelength range. Such long-wavelength visible-spectrum devices will play an important role in solid-state lighting applications. This review discusses the major classes of AlGaInP device structures, including absorbing-substrate ~AS! LEDs, absorbing substrate LEDs e...

متن کامل

Molecular beam epitaxy growth and characterizations of AlGaAsSb/AlAsSb Bragg reflectors on InP

The molecular beam epitaxy growth of AlAsSb/Al 0.04 Ga 0.96 AsSb distributed Bragg reflectors lattice-matched to InP is studied. The fabrication and characterization of two such reflectors are reported. Fine structural and optical properties of these samples are investigated using double crystal X-ray diffraction, scanning electron microscopy and reflectivity measurements. Main device performan...

متن کامل

Omni-directional reflectors for light-emitting diodes

This article discusses possible solutions to limitations in light extraction efficiency of light-emitting diodes (LEDs) using new types of triple-layer omni-directional reflectors (ODRs). The ODRs have lower mirror losses than metal reflectors and distributed Bragg reflectors (DBRs). High-reflectivity ODRs have been incorporated into AlGaInP LEDs and GaInN LEDs. It is shown that the ODR signifi...

متن کامل

Reflectance Mapping of Semiconductor Distributed Bragg Reflectors

We describe the design, construction and performance evaluation of a spectrally resolved reflectance mapping setup. The setup is capable of mapping a full 2 inch diameter semiconductor wafer, with a best spatial resolution of 50μm. The operating wavelength range is from 0.35μm to 1.05μm with spectral resolution of ~1nm. We have used this setup for reflectance mapping studies on distributed Brag...

متن کامل

Mode-Locking Ultrafast Solid-State Lasers with Saturable Bragg Reflectors

We discuss mode-locking of low-gain solid-state lasers using a semiconductor saturable Bragg reflector structure. This recently developed low-loss mode-locking device consists of a single quantum well which acts as a saturable absorber incorporated into a high-reflectivity Bragg mirror. Highly stable mode-locking in solid-state lasers results from an ultrafast transient reflectivity in the devi...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:
  • Optics express

دوره 9 6  شماره 

صفحات  -

تاریخ انتشار 2001